bipolar power transistors pnp silicon . . . designed for use in lineoperated applications such as low power, lineoperated series pass and switching regulators requiring pnp capability. ? high collectoremitter sustaining voltage e v ceo(sus) = 300 vdc @ i c = 1.0 madc ? excellent dc current gain e h fe = 30240 @ i c = 50 madc ????????????????????????????????? ????????????????????????????????? maximum ratings (t c = 25 c unless otherwise noted) ??????????????????????? ? ????????????????????? ? ??????????????????????? rating ????? ? ??? ? ????? symbol ???? ? ?? ? ???? value ???? ? ?? ? ???? unit ??????????????????????? ??????????????????????? collectoremitter voltage ????? ????? v ceo ???? ???? 300 ???? ???? vdc ??????????????????????? ??????????????????????? collectorbase voltage ????? ????? v cb ???? ???? 300 ???? ???? vdc ??????????????????????? ??????????????????????? emitterbase voltage ????? ????? v eb ???? ???? 3.0 ???? ???? vdc ??????????????????????? ? ????????????????????? ? ??????????????????????? collector current e continuous collector current e peak ????? ? ??? ? ????? i c ???? ? ?? ? ???? 0.5 0.75 ???? ? ?? ? ???? adc ??????????????????????? ? ????????????????????? ? ? ????????????????????? ? ??????????????????????? total power dissipation @ t c = 25 c derate above 25 c total p d @ t a = 25 c mounted on 1o sq. (645 sq. mm) collector pad on fr4 bd material to t a l p d @ t a = 25 c mounted on 0.012o sq. (7.6 sq. mm) collector pad on fr4 bd material ????? ? ??? ? ? ??? ? ????? p d ???? ? ?? ? ? ?? ? ???? 2.75 22 1.40 0.65 ???? ? ?? ? ? ?? ? ???? watts mw/ c watts watts ??????????????????????? ? ????????????????????? ? ??????????????????????? operating and storage junction temperature range ????? ? ??? ? ????? t j , t stg ???? ? ?? ? ???? 55 to +150 ???? ? ?? ? ???? c ????????????????????????????????? ????????????????????????????????? thermal characteristics ??????????????????????? ??????????????????????? characteristic ????? ????? symbol ???? ???? max ???? ???? unit ??????????????????????? ? ????????????????????? ? ? ????????????????????? ? ??????????????????????? thermal resistance junction to case junction to ambient on 1o sq. (645 sq. mm) collector pad on fr4 bd material junction to ambient on 0.012o sq. (7.6 sq. mm) collector pad on fr4 bd material ????? ? ??? ? ? ??? ? ????? r q jc r q ja r q ja ???? ? ?? ? ? ?? ? ???? 45 85 190 ???? ? ?? ? ? ?? ? ???? c/w ??????????????????????? ??????????????????????? maximum lead temperature for soldering purposes, 1/8o from case for 5 seconds ????? ????? t l ???? ???? 260 ???? ???? c on semiconductor ? semiconductor components industries, llc, 2001 june, 2001 rev. 0 1 publication order number: mmjt350t1/d mmjt350t1 case 318e04, style 1 top view pinout c ce b 4 123 0.5 ampere power transistor pnp silicon 300 volts 2.75 watts schematic c 2,4 b 1 e 3
mmjt350t1 http://onsemi.com 2 v , temperature coefficients (mv/ c) q i c , collector current (ma) h fe , dc current gain 200 7.0 20 5.0 50 30 10 10 50 100 30 25 c t j = 150 c -55 c figure 1. dc current gain 100 20 70 200 500 300 70 v ce = 2.0 v v cc = 10 v figure 2. aono voltages 1.0 i c , collector current (ma) 0.8 0.2 0 t j = 25 c v, voltage (volts) v be(sat) @ i c /i b = 10 v be @ v ce = 10 v 0.6 0.4 v ce(sat) 7.0 20 5.0 10 50 100 30 200 500 300 70 i c /i b = 10 i c /i b = 5.0 1000 v ce , collector-emitter voltage (volts) 70 300 10 50 bonding wire limited thermally limited @ t c = 25 c second breakdown limited figure 3. activeregion safe operating area 1.0ms dc 700 200 100 50 20 t j = 150 c i c , collector current (ma) 100 300 500 30 100 m s 400 30 70 200 20 500 m s +1.2 i c , collector current (ma) 70 figure 4. temperature coefficients 50 30 10 5.0 500 7.0 20 +0.8 +0.4 0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 100 200 300 *applies for i c /i b < h fe/4 * q vc for v ce(sat) q vb for v be +100 c to +150 c +25 c to +100 c -55 c to +25 c +25 c to +150 c -55 c to +25 c there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 3 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. figure 5. power derating 150 25 t, temperature ( c) 4.0 3.0 2.0 1.0 0 p 50 , power dissipation (watts) d 75 100 125 t a t c
mmjt350t1 http://onsemi.com 3 package dimensions case 318e04 issue k sot223 (to261) h s f a b d g l 4 123 0.08 (0003) c m k j dim a min max min max millimeters 0.249 0.263 6.30 6.70 inches b 0.130 0.145 3.30 3.70 c 0.060 0.068 1.50 1.75 d 0.024 0.035 0.60 0.89 f 0.115 0.126 2.90 3.20 g 0.087 0.094 2.20 2.40 h 0.0008 0.0040 0.020 0.100 j 0.009 0.014 0.24 0.35 k 0.060 0.078 1.50 2.00 l 0.033 0.041 0.85 1.05 m 0 10 0 10 s 0.264 0.287 6.70 7.30 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. style 1: pin 1. base 2. collector 3. emitter 4. collector
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